STD4N52K3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

2nC @ 10V

Terminal Finish :

Matte Tin (Sn) - annealed

Fall Time (Typ) :

14 ns

ECCN Code :

EAR99

Turn-Off Delay Time :

21 ns

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

30V

Rds On (Max) @ Id, Vgs :

2.6 Ω @ 1.25A, 10V

Number of Elements :

1

JESD-609 Code :

e3

Number of Terminations :

3

Operating Temperature :

150°C TJ

Rise Time :

7ns

Power Dissipation :

70W

JESD-30 Code :

R-PSIP-T3

Packaging :

Cut Tape (CT)

Mount :

Surface Mount, Through Hole

Number of Pins :

8

Current - Continuous Drain (Id) @ 25°C :

2.5A Tc

Series :

SuperMESH3™

Drain to Source Breakdown Voltage :

525V

Pin Count :

3

Continuous Drain Current (ID) :

2.5A

Additional Feature :

ULTRA-LOW RESISTANCE

Input Capacitance (Ciss) (Max) @ Vds :

334pF @ 100V

Vgs (Max) :

±30V

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Vgs(th) (Max) @ Id :

4.5V @ 50μA

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

8 ns

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Lead Free :

Lead Free

FET Type :

N-Channel

Resistance :

2.6Ohm

Power Dissipation-Max :

45W Tc

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Element Configuration :

Single

Base Part Number :

STD4N

Radiation Hardening :

No