STD4NK60Z-1

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

70W Tc

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Current - Continuous Drain (Id) @ 25°C :

4A Tc

Transistor Application :

SWITCHING

Power Dissipation :

70W

Mounting Type :

Through Hole

Drain to Source Breakdown Voltage :

600V

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

510pF @ 25V

Vgs(th) (Max) @ Id :

4.5V @ 50μA

Turn On Delay Time :

12 ns

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

4A

Packaging :

Tube

Turn-Off Delay Time :

29 ns

FET Type :

N-Channel

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Series :

SuperMESH™

JESD-609 Code :

e3

Base Part Number :

STD4N

Rds On (Max) @ Id, Vgs :

2 Ω @ 2A, 10V

Resistance :

2Ohm

Transistor Element Material :

SILICON

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 10V

Rise Time :

9.5ns

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

4A

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

30V

Radiation Hardening :

No

Vgs (Max) :

±30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Finish :

Matte Tin (Sn) - annealed

Mount :

Through Hole

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Element Configuration :

Single

Fall Time (Typ) :

16.5 ns

Number of Terminations :

3