STD4NK50ZD-1
- Mfr.Part #
- STD4NK50ZD-1
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 3A IPAK
- Stock
- 3,007
- In Stock :
- 3,007
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pin Count :
- 3
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max :
- 45W Tc
- Qualification Status :
- Not Qualified
- Number of Elements :
- 1
- FET Type :
- N-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Rise Time :
- 15.5ns
- Threshold Voltage :
- 3.5V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Power Dissipation :
- 45W
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Dual Supply Voltage :
- 500V
- REACH SVHC :
- No SVHC
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Rds On (Max) @ Id, Vgs :
- 2.7 Ω @ 1.5A, 10V
- Base Part Number :
- STD4N
- Fall Time (Typ) :
- 22 ns
- Element Configuration :
- Single
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 3A Tc
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- Nominal Vgs :
- 3.5 V
- Reach Compliance Code :
- not_compliant
- Mount :
- Through Hole
- Drain Current-Max (Abs) (ID) :
- 3A
- ECCN Code :
- EAR99
- Vgs (Max) :
- ±30V
- Continuous Drain Current (ID) :
- 3A
- Mounting Type :
- Through Hole
- Turn-Off Delay Time :
- 23 ns
- Drain to Source Breakdown Voltage :
- 500V
- Gate to Source Voltage (Vgs) :
- 30V
- Packaging :
- Tube
- Termination :
- Through Hole
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- Series :
- SuperMESH™
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 4.5V @ 50μA
- Gate Charge (Qg) (Max) @ Vgs :
- 12nC @ 10V
- Number of Pins :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 310pF @ 25V
- Datasheets
- STD4NK50ZD-1

N-Channel Tube 2.7 Ω @ 1.5A, 10V ±30V 310pF @ 25V 12nC @ 10V TO-251-3 Short Leads, IPak, TO-251AA
STD4NK50ZD-1 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 310pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 3A.With a drain-source breakdown voltage of 500V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 500V.3A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 23 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.3.5V is the threshold voltage at which an electrical device activates any of its operations.Using drive voltage (10V) reduces this device's overall power consumption.
STD4NK50ZD-1 Features
a continuous drain current (ID) of 3A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 23 ns
a threshold voltage of 3.5V
STD4NK50ZD-1 Applications
There are a lot of STMicroelectronics
STD4NK50ZD-1 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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