STD4NK50Z-1
- Mfr.Part #
- STD4NK50Z-1
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 3A IPAK
- Stock
- 11,999
- In Stock :
- 11,999
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- ECCN Code :
- EAR99
- Rise Time :
- 7ns
- Gate Charge (Qg) (Max) @ Vgs :
- 12nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Packaging :
- Tube
- Continuous Drain Current (ID) :
- 1.5A
- Turn-Off Delay Time :
- 21 ns
- Current - Continuous Drain (Id) @ 25°C :
- 3A Tc
- Peak Reflow Temperature (Cel) :
- 260
- Threshold Voltage :
- 3.75V
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Matte Tin (Sn)
- Turn On Delay Time :
- 10 ns
- Mount :
- Through Hole
- Operating Temperature :
- -55°C~150°C TJ
- Drain Current-Max (Abs) (ID) :
- 3A
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Mounting Type :
- Through Hole
- Series :
- SuperMESH™
- RoHS Status :
- ROHS3 Compliant
- Width :
- 2.4mm
- Vgs (Max) :
- ±30V
- Gate to Source Voltage (Vgs) :
- 30V
- REACH SVHC :
- No SVHC
- Fall Time (Typ) :
- 11 ns
- FET Type :
- N-Channel
- Drain to Source Breakdown Voltage :
- 500V
- Base Part Number :
- STD4N
- Number of Elements :
- 1
- Height :
- 6.2mm
- Pin Count :
- 3
- Element Configuration :
- Single
- Vgs(th) (Max) @ Id :
- 4.5V @ 50μA
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Power Dissipation-Max :
- 45W Tc
- Number of Terminations :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation :
- 45W
- Input Capacitance (Ciss) (Max) @ Vds :
- 310pF @ 25V
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- Length :
- 6.6mm
- Rds On (Max) @ Id, Vgs :
- 2.7 Ω @ 1.5A, 10V
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheets
- STD4NK50Z-1

N-Channel Tube 2.7 Ω @ 1.5A, 10V ±30V 310pF @ 25V 12nC @ 10V TO-251-3 Short Leads, IPak, TO-251AA
STD4NK50Z-1 Overview
A device's maximal input capacitance is 310pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 1.5A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 500V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 3A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 21 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 10 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 3.75V threshold voltage.This device reduces its overall power consumption by using drive voltage (10V).
STD4NK50Z-1 Features
a continuous drain current (ID) of 1.5A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 21 ns
a threshold voltage of 3.75V
STD4NK50Z-1 Applications
There are a lot of STMicroelectronics
STD4NK50Z-1 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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