STD4NK100Z

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Channels :

1

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

1000V

Power Dissipation :

90W

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

30V

Pulsed Drain Current-Max (IDM) :

8.8A

Turn On Delay Time :

15 ns

Rds On (Max) @ Id, Vgs :

6.8 Ω @ 1.1A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

2.2A Tc

Case Connection :

DRAIN

Number of Terminations :

2

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

90W Tc

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

2.2A

Transistor Application :

SWITCHING

Vgs (Max) :

±30V

Series :

Automotive, AEC-Q101, SuperMESH™

Input Capacitance (Ciss) (Max) @ Vds :

601pF @ 25V

Terminal Position :

Single

Height :

2.63mm

Factory Lead Time :

12 Weeks

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

STD4N

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Terminal Form :

Gull wing

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSSO-G2

Number of Pins :

3

Drain to Source Breakdown Voltage :

1kV

Mount :

Surface Mount

Max Junction Temperature (Tj) :

150°C

Packaging :

Cut Tape (CT)

Turn-Off Delay Time :

32 ns

Vgs(th) (Max) @ Id :

4.5V @ 50μA