STD4N80K5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

800V

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Fall Time (Typ) :

21 ns

Height :

2.4mm

Packaging :

Cut Tape (CT)

Factory Lead Time :

17 Weeks

Gate Charge (Qg) (Max) @ Vgs :

10.5nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

30V

Transistor Application :

SWITCHING

Series :

SuperMESH5™

JESD-30 Code :

R-PSSO-G2

Number of Elements :

1

Number of Pins :

3

Vgs (Max) :

±30V

Operating Temperature :

-55°C~150°C TJ

Radiation Hardening :

No

Base Part Number :

STD4N

Vgs(th) (Max) @ Id :

5V @ 100µA

Contact Plating :

Tin

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

2.5 Ω @ 1.5A, 10V

RoHS Status :

ROHS3 Compliant

Width :

6.2mm

Continuous Drain Current (ID) :

3A

Element Configuration :

Single

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

2

Number of Channels :

1

Power Dissipation :

60W

Turn On Delay Time :

16.5 ns

Mounting Type :

Surface Mount

Case Connection :

DRAIN

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

175pF @ 100V

ECCN Code :

EAR99

Rise Time :

15ns

Lead Free :

Lead Free

Power Dissipation-Max :

60W Tc

Turn-Off Delay Time :

36 ns

Drain Current-Max (Abs) (ID) :

3A

Length :

6.6mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Resistance :

2.5Ohm

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

74.5 mJ

Current - Continuous Drain (Id) @ 25°C :

3A Tc