STD4N62K3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

1.95 Ω @ 1.9A, 10V

Power Dissipation-Max :

70W Tc

Operating Mode :

ENHANCEMENT MODE

Packaging :

Cut Tape (CT)

Turn On Delay Time :

10 ns

Mount :

Surface Mount

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Mounting Type :

Surface Mount

FET Type :

N-Channel

Transistor Element Material :

SILICON

Factory Lead Time :

12 Weeks

Gate to Source Voltage (Vgs) :

30V

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Current - Continuous Drain (Id) @ 25°C :

3.8A Tc

Height :

2.4mm

Vgs (Max) :

±30V

Rise Time :

9ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Length :

6.6mm

Base Part Number :

STD4N

Input Capacitance (Ciss) (Max) @ Vds :

450pF @ 50V

Pin Count :

3

Width :

6.2mm

Series :

SuperMESH3™

Power Dissipation :

70W

JESD-30 Code :

R-PSSO-G2

Resistance :

1.95Ohm

Number of Elements :

1

Continuous Drain Current (ID) :

3.8A

Terminal Form :

Gull wing

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

620V

Threshold Voltage :

3.75V

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

4.5V @ 50μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Turn-Off Delay Time :

29 ns

Lead Free :

Lead Free

Number of Terminations :

2

Element Configuration :

Single

REACH SVHC :

No SVHC

Fall Time (Typ) :

19 ns

Operating Temperature :

150°C TJ

Radiation Hardening :

No