STB4NK60ZT4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

9.5ns

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

4A Tc

Drain Current-Max (Abs) (ID) :

4A

Input Capacitance (Ciss) (Max) @ Vds :

510pF @ 25V

Number of Elements :

1

Element Configuration :

Single

Operating Temperature :

150°C TJ

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Height :

4.6mm

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drain to Source Breakdown Voltage :

600V

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Nominal Vgs :

3.75 V

Vgs(th) (Max) @ Id :

4.5V @ 50μA

Rds On (Max) @ Id, Vgs :

2 Ω @ 2A, 10V

Number of Pins :

3

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

REACH SVHC :

No SVHC

Lead Free :

Lead Free

Base Part Number :

STB4N

Vgs (Max) :

±30V

Mount :

Surface Mount

Width :

9.35mm

Power Dissipation :

70W

Current Rating :

4A

Terminal Finish :

Matte Tin (Sn) - annealed

Drive Voltage (Max Rds On,Min Rds On) :

10V

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Resistance :

2Ohm

Voltage - Rated DC :

600V

Terminal Form :

Gull wing

Turn-Off Delay Time :

29 ns

Factory Lead Time :

12 Weeks

Fall Time (Typ) :

16.5 ns

Transistor Application :

SWITCHING

Number of Terminations :

2

Termination :

SMD/SMT

Dual Supply Voltage :

600V

Time@Peak Reflow Temperature-Max (s) :

30

JESD-30 Code :

R-PSSO-G2

Continuous Drain Current (ID) :

2A

Radiation Hardening :

No

Threshold Voltage :

3.75V

Gate to Source Voltage (Vgs) :

30V

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

70W Tc

Peak Reflow Temperature (Cel) :

245

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 10V

Turn On Delay Time :

12 ns

Length :

10.4mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

SuperMESH™