STB43N65M5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

4.83mm

Lead Free :

Lead Free

ECCN Code :

EAR99

Turn-Off Delay Time :

12 ns

Drain to Source Breakdown Voltage :

650V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V

Transistor Element Material :

SILICON

Base Part Number :

STB43N

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Input Capacitance (Ciss) (Max) @ Vds :

4400pF @ 100V

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

42A Tc

Mount :

Surface Mount

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

JESD-30 Code :

R-PSSO-G2

Drain-source On Resistance-Max :

0.063Ohm

Power Dissipation :

250W

Number of Terminations :

2

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Number of Channels :

1

Continuous Drain Current (ID) :

42A

Rds On (Max) @ Id, Vgs :

63m Ω @ 21A, 10V

Vgs(th) (Max) @ Id :

5V @ 250μA

Terminal Position :

Single

Mounting Type :

Surface Mount

Packaging :

Cut Tape (CT)

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

25V

Max Junction Temperature (Tj) :

150°C

Vgs (Max) :

±25V

Avalanche Energy Rating (Eas) :

650 mJ

Manufacturer Package Identifier :

D2PAK-0079457-A2

FET Type :

N-Channel

Power Dissipation-Max :

250W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

Automotive, AEC-Q101, MDmesh™

Turn On Delay Time :

73 ns