STB45N40DM2AG

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Base Part Number :

STB45N

DS Breakdown Voltage-Min :

400V

Gate Charge (Qg) (Max) @ Vgs :

56nC @ 10V

Vgs(th) (Max) @ Id :

5V @ 250μA

Transistor Element Material :

SILICON

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

2600pF @ 100V

Transistor Application :

SWITCHING

Power Dissipation-Max :

250W Tc

Avalanche Energy Rating (Eas) :

1100 mJ

Factory Lead Time :

17 Weeks

Pulsed Drain Current-Max (IDM) :

110A

Continuous Drain Current (ID) :

38A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

R-PSSO-G2

Number of Terminations :

2

Number of Elements :

1

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.072Ohm

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

72m Ω @ 19A, 10V

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Mount :

Surface Mount

Series :

Automotive, AEC-Q101, MDmesh™ DM2

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

38A Tc

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

400V

Vgs (Max) :

±25V