STB42N65M5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

650V

JESD-30 Code :

R-PSSO-G2

Avalanche Energy Rating (Eas) :

950 mJ

Rds On (Max) @ Id, Vgs :

79m Ω @ 16.5A, 10V

Turn-Off Delay Time :

65 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Element Configuration :

Single

Transistor Application :

SWITCHING

Series :

MDmesh™ V

Input Capacitance (Ciss) (Max) @ Vds :

4650pF @ 100V

Lead Free :

Lead Free

Continuous Drain Current (ID) :

33A

Operating Temperature :

150°C TJ

REACH SVHC :

No SVHC

Rise Time :

24ns

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

2

Time@Peak Reflow Temperature-Max (s) :

30

Base Part Number :

STB42N

Vgs (Max) :

±25V

Packaging :

Tape and Reel (TR)

Number of Pins :

3

Peak Reflow Temperature (Cel) :

245

Pin Count :

4

Resistance :

79mOhm

Power Dissipation-Max :

190W Tc

Factory Lead Time :

17 Weeks

Gate to Source Voltage (Vgs) :

25V

Number of Elements :

1

Height :

4.6mm

FET Type :

N-Channel

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

5V @ 250μA

Turn On Delay Time :

61 ns

Current - Continuous Drain (Id) @ 25°C :

33A Tc

Fall Time (Typ) :

13 ns

Length :

10.75mm

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V

Terminal Finish :

Matte Tin (Sn) - annealed

Threshold Voltage :

4V

Power Dissipation :

190W

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Radiation Hardening :

No

Width :

10.4mm

Terminal Form :

Gull wing

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3