STB40N60M2

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Series :

MDmesh™ II Plus

DS Breakdown Voltage-Min :

600V

Lead Free :

Lead Free

Fall Time (Typ) :

11 ns

Turn On Delay Time :

20.5 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±25V

Continuous Drain Current (ID) :

34A

Number of Elements :

1

Vgs(th) (Max) @ Id :

4V @ 250µA

JESD-30 Code :

R-PSSO-G2

Drive Voltage (Max Rds On,Min Rds On) :

10V

Weight :

3.949996g

Rise Time :

13.5ns

FET Type :

N-Channel

Factory Lead Time :

26 Weeks

Number of Terminations :

2

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Cut Tape (CT)

Terminal Form :

Gull wing

Case Connection :

DRAIN

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Number of Channels :

1

Contact Plating :

Tin

Turn-Off Delay Time :

96 ns

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

500 mJ

Rds On (Max) @ Id, Vgs :

88m Ω @ 17A, 10V

Drain to Source Voltage (Vdss) :

600V

Base Part Number :

STB40N

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

34A Tc

Input Capacitance (Ciss) (Max) @ Vds :

2500pF @ 100V

Gate Charge (Qg) (Max) @ Vgs :

57nC @ 10V

ECCN Code :

EAR99

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Gate to Source Voltage (Vgs) :

25V

Drain-source On Resistance-Max :

0.088Ohm

Power Dissipation-Max :

250W Tc

Mount :

Surface Mount