STB40NF10T4
- Mfr.Part #
- STB40NF10T4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 50A D2PAK
- Stock
- 13,623
- In Stock :
- 13,623
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -50°C~175°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- ECCN Code :
- EAR99
- Height :
- 4.6mm
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 150W
- Length :
- 10.75mm
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Pins :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 50A Tc
- Series :
- STripFET™ II
- Turn-Off Delay Time :
- 84 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 80nC @ 10V
- Fall Time (Typ) :
- 28 ns
- Turn On Delay Time :
- 28 ns
- JESD-30 Code :
- R-PSSO-G2
- Mounting Type :
- Surface Mount
- Radiation Hardening :
- No
- Resistance :
- 28mOhm
- REACH SVHC :
- No SVHC
- Mount :
- Surface Mount
- Drain Current-Max (Abs) (ID) :
- 40A
- Continuous Drain Current (ID) :
- 50A
- Input Capacitance (Ciss) (Max) @ Vds :
- 1780pF @ 25V
- Rds On (Max) @ Id, Vgs :
- 28m Ω @ 25A, 10V
- Power Dissipation-Max :
- 150W Tc
- Operating Mode :
- ENHANCEMENT MODE
- Width :
- 10.4mm
- Voltage - Rated DC :
- 100V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Base Part Number :
- STB40N
- FET Type :
- N-Channel
- Number of Elements :
- 1
- Rise Time :
- 63ns
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Threshold Voltage :
- 2.8V
- Number of Terminations :
- 2
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Drain to Source Breakdown Voltage :
- 100V
- Element Configuration :
- Single
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Peak Reflow Temperature (Cel) :
- 245
- Vgs (Max) :
- ±20V
- Case Connection :
- DRAIN
- Current Rating :
- 50A
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Pulsed Drain Current-Max (IDM) :
- 200A
- Terminal Form :
- Gull wing
- JESD-609 Code :
- e3
- Datasheets
- STB40NF10T4

N-Channel Tape & Reel (TR) 28m Ω @ 25A, 10V ±20V 1780pF @ 25V 80nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB40NF10T4 Description
The STB40NF10T4 is a STripFET? II N-channel Power MOSFET developed using STMicroelectronic's unique Single Feature Size? strip-based process. The device has extremely high packing density for low ON-resistance, rugged avalanche characteristics, and less critical alignment steps therefore a remarkable manufacturing reproducibility. The operating junction and storage temperature are between -55 and 175℃. The MOSFET STB40NF10T4 is in the TO-263 package with 150W power dissipation.
STB40NF10T4 Features
-
Exceptional dV/dt capability
-
Low gate charge at 100°C
-
100% Avalanche tested
-
Application-oriented characterization
-
-50 to 175°C Operating junction temperature range
STB40NF10T4 Applications
-
Power Management
-
Industrial
-
Switching application
-
Induction furnaces
-
Communication devices
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