STB4N62K3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

3.8A

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

620V

FET Type :

N-Channel

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

450pF @ 50V

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

3.8A Tc

Gate to Source Voltage (Vgs) :

30V

Power Dissipation :

70W

Number of Elements :

1

Radiation Hardening :

No

Series :

SuperMESH3™

Resistance :

1.95Ohm

Rds On (Max) @ Id, Vgs :

1.95 Ω @ 1.9A, 10V

Turn-Off Delay Time :

29 ns

Rise Time :

9ns

Turn On Delay Time :

10 ns

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

Pin Count :

4

Base Part Number :

STB4N

Power Dissipation-Max :

70W Tc

Element Configuration :

Single

Pbfree Code :

yes

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

4.5V @ 50μA

Lead Free :

Lead Free

Fall Time (Typ) :

19 ns

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

150°C TJ

JESD-30 Code :

R-PSSO-G2

Packaging :

Cut Tape (CT)

Terminal Form :

Gull wing

Number of Terminations :

2