STB46N30M5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

5V @ 250μA

Drain to Source Voltage (Vdss) :

300V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

95nC @ 10V

Continuous Drain Current (ID) :

53A

Drain-source On Resistance-Max :

0.04Ohm

FET Type :

N-Channel

Transistor Application :

SWITCHING

Terminal Position :

Single

Mounting Type :

Surface Mount

Packaging :

Cut Tape (CT)

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Current - Continuous Drain (Id) @ 25°C :

53A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

Automotive, AEC-Q101, MDmesh™ V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs (Max) :

±25V

JESD-30 Code :

R-PSSO-G2

Operating Temperature :

150°C TJ

Number of Elements :

1

DS Breakdown Voltage-Min :

300V

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

17 Weeks

Base Part Number :

STB46N

Input Capacitance (Ciss) (Max) @ Vds :

4240pF @ 100V

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

40m Ω @ 26.5A, 10V

Terminal Form :

Gull wing

Avalanche Energy Rating (Eas) :

550 mJ

Mount :

Surface Mount

Number of Terminations :

2

Power Dissipation-Max :

250W Tc

Pulsed Drain Current-Max (IDM) :

212A