STB45NF06
- Mfr.Part #
- STB45NF06
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 38A D2PAK
- Stock
- 2,838
- In Stock :
- 2,838
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current Rating :
- 38A
- Power Dissipation-Max :
- 80W Tc
- Peak Reflow Temperature (Cel) :
- 245
- Transistor Element Material :
- SILICON
- Voltage - Rated DC :
- 60V
- JESD-609 Code :
- e3
- Gate to Source Voltage (Vgs) :
- 20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 980pF @ 25V
- Base Part Number :
- STB45N
- Qualification Status :
- Not Qualified
- Rds On (Max) @ Id, Vgs :
- 28m Ω @ 19A, 10V
- Pulsed Drain Current-Max (IDM) :
- 152A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Terminal Finish :
- Matte Tin (Sn)
- FET Type :
- N-Channel
- Avalanche Energy Rating (Eas) :
- 260 mJ
- Number of Terminations :
- 2
- Current - Continuous Drain (Id) @ 25°C :
- 38A Tc
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Mount :
- Surface Mount
- Element Configuration :
- Single
- Power Dissipation :
- 80W
- Packaging :
- Tape and Reel (TR)
- Pin Count :
- 3
- Operating Temperature :
- -55°C~175°C TJ
- Reach Compliance Code :
- not_compliant
- Resistance :
- 28mOhm
- Fall Time (Typ) :
- 10 ns
- Rise Time :
- 40ns
- Series :
- STripFET™ II
- Vgs (Max) :
- ±20V
- Lead Free :
- Lead Free
- Drain to Source Breakdown Voltage :
- 60V
- JESD-30 Code :
- R-PSSO-G2
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs :
- 58nC @ 10V
- Transistor Application :
- SWITCHING
- Terminal Form :
- Gull wing
- Turn-Off Delay Time :
- 28 ns
- Operating Mode :
- ENHANCEMENT MODE
- Continuous Drain Current (ID) :
- 38A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Elements :
- 1
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Mounting Type :
- Surface Mount
- Datasheets
- STB45NF06

N-Channel Tape & Reel (TR) 28m Ω @ 19A, 10V ±20V 980pF @ 25V 58nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB45NF06 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 260 mJ.A device's maximal input capacitance is 980pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 38A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 60V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 28 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 152A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This device reduces its overall power consumption by using drive voltage (10V).
STB45NF06 Features
the avalanche energy rating (Eas) is 260 mJ
a continuous drain current (ID) of 38A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 28 ns
based on its rated peak drain current 152A.
STB45NF06 Applications
There are a lot of STMicroelectronics
STB45NF06 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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