STB45N65M5
- Mfr.Part #
- STB45N65M5
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N CH 650V 35A D2PAK
- Stock
- 400
- In Stock :
- 400
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Width :
- 9.35mm
- Gate Charge (Qg) (Max) @ Vgs :
- 91nC @ 10V
- Additional Feature :
- ULTRA LOW RESISTANCE
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Length :
- 10.4mm
- Resistance :
- 78mOhm
- FET Type :
- N-Channel
- Transistor Application :
- SWITCHING
- Gate to Source Voltage (Vgs) :
- 25V
- Max Junction Temperature (Tj) :
- 150°C
- Number of Pins :
- 3
- Element Configuration :
- Single
- Terminal Form :
- THROUGH-HOLE
- Current - Continuous Drain (Id) @ 25°C :
- 35A Tc
- Turn On Delay Time :
- 11 ns
- Number of Channels :
- 1
- Factory Lead Time :
- 17 Weeks
- Power Dissipation-Max :
- 210W Tc
- Mount :
- Surface Mount
- Base Part Number :
- STB45N
- Lead Free :
- Lead Free
- Input Capacitance (Ciss) (Max) @ Vds :
- 3375pF @ 100V
- Series :
- MDmesh™ V
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Manufacturer Package Identifier :
- D2PAK
- Operating Temperature :
- 150°C TJ
- Transistor Element Material :
- SILICON
- Drain to Source Breakdown Voltage :
- 650V
- ECCN Code :
- EAR99
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Continuous Drain Current (ID) :
- 35A
- RoHS Status :
- ROHS3 Compliant
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Turn-Off Delay Time :
- 79.5 ns
- Power Dissipation :
- 210W
- Case Connection :
- DRAIN
- Threshold Voltage :
- 4V
- Rds On (Max) @ Id, Vgs :
- 78m Ω @ 19.5A, 10V
- Number of Terminations :
- 3
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Height :
- 4.6mm
- Vgs (Max) :
- ±25V
- JEDEC-95 Code :
- TO-220AB
- Radiation Hardening :
- No
- Packaging :
- Tape and Reel (TR)
- Operating Mode :
- ENHANCEMENT MODE
- Mounting Type :
- Surface Mount
- Datasheets
- STB45N65M5

N-Channel Tape & Reel (TR) 78m Ω @ 19.5A, 10V ±25V 3375pF @ 100V 91nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Worldwide best RDS(on) * area
Higher VDSSrating and high dv/dt capability
Excellent switching performance
100% avalanche tested
STB45N65M5 Discription
These devices are based on the innovative vertical process technology of N-channel MDMesh "V" power MOSFET, which is combined with the well-known PowerMesh semiconductor horizontal layout structure. The resulting products have extremely low on-resistance, which is unparalleled in silicon-based power MOSFET, making it particularly suitable for applications that require higher power density and excellent efficiency.
STB45N65M5 is based on the innovative vertical process technology of N-channel MDMesh "V" power MOSFET, which is combined with the well-known PowerMesh semiconductor horizontal layout structure.
STB45N65M5 Applications
? Switching applications
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