STB3NK60ZT4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

3.6 Ω @ 1.2A, 10V

Turn On Delay Time :

9 ns

JESD-609 Code :

e3

Mount :

Surface Mount

Terminal Finish :

Matte Tin (Sn) - annealed

Threshold Voltage :

3.75V

ECCN Code :

EAR99

Turn-Off Delay Time :

19 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PSSO-G2

Gate to Source Voltage (Vgs) :

30V

Voltage - Rated DC :

600V

REACH SVHC :

No SVHC

Width :

10.4mm

Current - Continuous Drain (Id) @ 25°C :

2.4A Tc

Gate Charge (Qg) (Max) @ Vgs :

11.8nC @ 10V

Current Rating :

2.4A

Element Configuration :

Single

Number of Pins :

3

Pulsed Drain Current-Max (IDM) :

9.6A

Pin Count :

3

Drain to Source Breakdown Voltage :

600V

Length :

10.75mm

Number of Elements :

1

Power Dissipation-Max :

45W Tc

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

30

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

245

Lifecycle Status :

NRND (Last Updated: 7 months ago)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Continuous Drain Current (ID) :

1.2A

Number of Terminations :

2

Base Part Number :

STB3N

Vgs(th) (Max) @ Id :

4.5V @ 50μA

Input Capacitance (Ciss) (Max) @ Vds :

311pF @ 25V

Transistor Element Material :

SILICON

Rise Time :

14ns

Vgs (Max) :

±30V

Fall Time (Typ) :

14 ns

Power Dissipation :

45W

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

SuperMESH™

RoHS Status :

ROHS3 Compliant

Height :

4.6mm

Radiation Hardening :

No