STB30N65M5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

140W Tc

Turn On Delay Time :

50 ns

Base Part Number :

STB30N

Input Capacitance (Ciss) (Max) @ Vds :

2880pF @ 100V

Resistance :

139mOhm

Time@Peak Reflow Temperature-Max (s) :

30

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Rise Time :

8ns

Terminal Form :

Gull wing

Vgs (Max) :

±25V

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Terminal Finish :

Matte Tin (Sn) - annealed

Series :

MDmesh™ V

Drain to Source Breakdown Voltage :

650V

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

88A

Number of Terminations :

2

Number of Pins :

3

Transistor Application :

SWITCHING

Radiation Hardening :

No

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Additional Feature :

AVALANCHE ENERGY RATED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation :

140W

JESD-609 Code :

e3

Packaging :

Cut Tape (CT)

Rds On (Max) @ Id, Vgs :

139m Ω @ 11A, 10V

ECCN Code :

EAR99

Turn-Off Delay Time :

50 ns

Avalanche Energy Rating (Eas) :

500 mJ

Current - Continuous Drain (Id) @ 25°C :

22A Tc

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

5V @ 250μA

Peak Reflow Temperature (Cel) :

245

Fall Time (Typ) :

10 ns

Factory Lead Time :

17 Weeks

Gate to Source Voltage (Vgs) :

25V

Continuous Drain Current (ID) :

22A

Operating Temperature :

150°C TJ

FET Type :

N-Channel

Transistor Element Material :

SILICON

Pin Count :

4

JESD-30 Code :

R-PSSO-G2

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

64nC @ 10V

Element Configuration :

Single