STB30NF10T4

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Mfr.Part #
STB30NF10T4
Manufacturer
STMicroelectronics
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 100V 35A D2PAK
Stock
14,789
In Stock :
14,789

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Turn-Off Delay Time :
45 ns
Operating Mode :
ENHANCEMENT MODE
Base Part Number :
STB30N
Factory Lead Time :
12 Weeks
Current - Continuous Drain (Id) @ 25°C :
35A Tc
Voltage - Rated DC :
100V
Current Rating :
35A
Power Dissipation :
115W
Width :
9.35mm
Terminal Form :
Gull wing
Number of Elements :
1
Time@Peak Reflow Temperature-Max (s) :
30
Mounting Type :
Surface Mount
Number of Pins :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation-Max :
115W Tc
Additional Feature :
AVALANCHE RATED
Case Connection :
DRAIN
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Gate to Source Voltage (Vgs) :
20V
Vgs(th) (Max) @ Id :
4V @ 250µA
FET Type :
N-Channel
Element Configuration :
Single
Length :
10.4mm
Drain to Source Breakdown Voltage :
100V
JESD-30 Code :
R-PSSO-G2
Lifecycle Status :
ACTIVE (Last Updated: 7 months ago)
Turn On Delay Time :
15 ns
Rise Time :
40ns
Drive Voltage (Max Rds On,Min Rds On) :
10V
Peak Reflow Temperature (Cel) :
245
JESD-609 Code :
e3
Rds On (Max) @ Id, Vgs :
45m Ω @ 15A, 10V
Transistor Application :
SWITCHING
Operating Temperature :
-55°C~175°C TJ
Threshold Voltage :
3V
Mount :
Surface Mount
REACH SVHC :
No SVHC
Lead Free :
Lead Free
Radiation Hardening :
No
Vgs (Max) :
±20V
Terminal Finish :
Matte Tin (Sn) - annealed
Number of Terminations :
2
Continuous Drain Current (ID) :
15A
Resistance :
45mOhm
Pin Count :
3
Packaging :
Tape and Reel (TR)
Fall Time (Typ) :
10 ns
Height :
4.6mm
ECCN Code :
EAR99
Gate Charge (Qg) (Max) @ Vgs :
55nC @ 10V
Transistor Element Material :
SILICON
Input Capacitance (Ciss) (Max) @ Vds :
1180pF @ 25V
RoHS Status :
ROHS3 Compliant
Avalanche Energy Rating (Eas) :
275 mJ
Series :
STripFET™ II
Datasheets
STB30NF10T4
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STB30NF10T4 from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:STB30N, Mounting Type:Surface Mount, Number of Pins:3, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Operating Temperature:-55°C~175°C TJ, Number of Terminations:2, STB30NF10T4 pinout, STB30NF10T4 datasheet PDF, STB30NF10T4 amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STB30NF10T4 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STB30NF10T4


N-Channel Tape & Reel (TR) 45m Ω @ 15A, 10V ±20V 1180pF @ 25V 55nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

STB30NF10T4 Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 275 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1180pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 15A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 100V, and this device has a drainage-to-source breakdown voltage of 100VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 45 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 15 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 3V, which means that it will not activate any of its functions when its threshold voltage reaches 3V.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

STB30NF10T4 Features


the avalanche energy rating (Eas) is 275 mJ
a continuous drain current (ID) of 15A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 45 ns
a threshold voltage of 3V


STB30NF10T4 Applications


There are a lot of STMicroelectronics
STB30NF10T4 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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