STB30NM60N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

125 ns

JESD-30 Code :

R-PSSO-G2

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

100A

Vgs (Max) :

±30V

Operating Temperature :

150°C TJ

Power Dissipation-Max :

190W Tc

Base Part Number :

STB30N

Gate to Source Voltage (Vgs) :

30V

Element Configuration :

Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Mounting Type :

Surface Mount

Qualification Status :

Not Qualified

FET Type :

N-Channel

Number of Terminations :

2

Power Dissipation :

190W

Transistor Application :

SWITCHING

Series :

MDmesh™ II

Avalanche Energy Rating (Eas) :

900 mJ

Gate Charge (Qg) (Max) @ Vgs :

91nC @ 10V

Pin Count :

4

Terminal Finish :

Matte Tin (Sn)

Time@Peak Reflow Temperature-Max (s) :

30

Continuous Drain Current (ID) :

25A

Rds On (Max) @ Id, Vgs :

130m Ω @ 12.5A, 10V

Rise Time :

24ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

25A Tc

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

2700pF @ 50V

ECCN Code :

EAR99

Number of Elements :

1

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Resistance :

130mOhm

Peak Reflow Temperature (Cel) :

245

Fall Time (Typ) :

70 ns

Reach Compliance Code :

not_compliant

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

600V