STB30NM50N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Fall Time (Typ) :

60 ns

Power Dissipation :

190W

Drain to Source Breakdown Voltage :

500V

Peak Reflow Temperature (Cel) :

245

Gate Charge (Qg) (Max) @ Vgs :

94nC @ 10V

Packaging :

Tape and Reel (TR)

Base Part Number :

STB30N

Power Dissipation-Max :

190W Tc

Continuous Drain Current (ID) :

27A

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Avalanche Energy Rating (Eas) :

900 mJ

Case Connection :

Isolated

Input Capacitance (Ciss) (Max) @ Vds :

2740pF @ 50V

Time@Peak Reflow Temperature-Max (s) :

30

RoHS Status :

ROHS3 Compliant

Operating Temperature :

150°C TJ

JESD-30 Code :

R-PSSO-G2

Number of Terminations :

2

Qualification Status :

Not Qualified

Rds On (Max) @ Id, Vgs :

115m Ω @ 13.5A, 10V

Reach Compliance Code :

not_compliant

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Turn-Off Delay Time :

115 ns

Rise Time :

20ns

Current - Continuous Drain (Id) @ 25°C :

27A Tc

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Finish :

Matte Tin (Sn) - annealed

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

25V

Mount :

Surface Mount

Vgs (Max) :

±25V

ECCN Code :

EAR99

Element Configuration :

Single

Number of Elements :

1

Terminal Form :

Gull wing

JESD-609 Code :

e3

Series :

MDmesh™ II

FET Type :

N-Channel

Number of Pins :

3

Pin Count :

4