STB30NM60ND

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

JESD-30 Code :

R-PSSO-G2

Base Part Number :

STB30N

Fall Time (Typ) :

75 ns

Number of Elements :

1

Gate to Source Voltage (Vgs) :

25V

Pin Count :

4

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

5V @ 250μA

REACH SVHC :

No SVHC

Nominal Vgs :

4 V

Power Dissipation :

190W

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Number of Terminations :

2

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drain Current-Max (Abs) (ID) :

25A

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

600V

Rise Time :

50ns

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V

Vgs (Max) :

±25V

Current - Continuous Drain (Id) @ 25°C :

25A Tc

Power Dissipation-Max :

190W Tc

Turn-Off Delay Time :

110 ns

ECCN Code :

EAR99

Continuous Drain Current (ID) :

12.5A

Series :

FDmesh™ II

Mounting Type :

Surface Mount

Avalanche Energy Rating (Eas) :

900 mJ

Operating Temperature :

150°C TJ

Rds On (Max) @ Id, Vgs :

130m Ω @ 12.5A, 10V

Resistance :

130mOhm

Lead Free :

Lead Free

Number of Pins :

3

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

2800pF @ 50V

Packaging :

Tape and Reel (TR)

Qualification Status :

Not Qualified

Mount :

Surface Mount