STB3N62K3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Threshold Voltage :

3.75V

Fall Time (Typ) :

15.6 ns

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

2.7A Tc

Number of Terminations :

2

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

4.5V @ 50μA

JESD-609 Code :

e3

Pin Count :

4

Height :

4.6mm

Rds On (Max) @ Id, Vgs :

2.5 Ω @ 1.4A, 10V

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

Terminal Finish :

Matte Tin (Sn) - annealed

Input Capacitance (Ciss) (Max) @ Vds :

385pF @ 25V

Length :

10.75mm

Vgs (Max) :

±30V

Pbfree Code :

yes

REACH SVHC :

No SVHC

Peak Reflow Temperature (Cel) :

245

Transistor Application :

SWITCHING

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

9 ns

Terminal Form :

Gull wing

Base Part Number :

STB3N

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

10.8A

Rise Time :

6.8ns

Number of Pins :

3

Power Dissipation :

45W

Power Dissipation-Max :

45W Tc

Drain to Source Breakdown Voltage :

620V

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

30V

FET Type :

N-Channel

Width :

10.4mm

Operating Temperature :

150°C TJ

Continuous Drain Current (ID) :

2.7A

Turn-Off Delay Time :

22 ns

Resistance :

2.5Ohm

JESD-30 Code :

R-PSSO-G2

Radiation Hardening :

No

Avalanche Energy Rating (Eas) :

100 mJ

Series :

SuperMESH3™

Drive Voltage (Max Rds On,Min Rds On) :

10V