STB38N65M5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Base Part Number :

STB38N

Time@Peak Reflow Temperature-Max (s) :

30

Turn-Off Delay Time :

66 ns

Resistance :

95mOhm

Height :

4.6mm

Series :

MDmesh™ V

Turn On Delay Time :

66 ns

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

71nC @ 10V

Terminal Finish :

Matte Tin (Sn) - annealed

Width :

9.35mm

Drain to Source Breakdown Voltage :

650V

JEDEC-95 Code :

TO-220AB

Case Connection :

Isolated

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Power Dissipation :

190W

Operating Temperature :

150°C TJ

Peak Reflow Temperature (Cel) :

245

Transistor Element Material :

SILICON

Factory Lead Time :

17 Weeks

Avalanche Energy Rating (Eas) :

660 mJ

Length :

10.4mm

Mounting Type :

Surface Mount

Vgs (Max) :

±25V

ECCN Code :

EAR99

Element Configuration :

Single

Fall Time (Typ) :

9 ns

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

190W Tc

Mount :

Surface Mount

Transistor Application :

SWITCHING

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Rds On (Max) @ Id, Vgs :

95m Ω @ 15A, 10V

Radiation Hardening :

No

Terminal Form :

THROUGH-HOLE

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Operating Mode :

ENHANCEMENT MODE

Rise Time :

9ns

Continuous Drain Current (ID) :

30A

Number of Pins :

3

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

5V @ 250μA

Gate to Source Voltage (Vgs) :

25V

Input Capacitance (Ciss) (Max) @ Vds :

3000pF @ 100V