STB36NM60ND

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

80.4nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

29A Tc

Number of Pins :

3

Turn-Off Delay Time :

111 ns

Base Part Number :

STB36N

Packaging :

Cut Tape (CT)

Mounting Type :

Surface Mount

Operating Temperature :

150°C TJ

Gate to Source Voltage (Vgs) :

25V

Input Capacitance (Ciss) (Max) @ Vds :

2785pF @ 50V

Continuous Drain Current (ID) :

29A

Power Dissipation-Max :

190W Tc

Turn On Delay Time :

30 ns

Lead Free :

Lead Free

Height :

4.6mm

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

110m Ω @ 14.5A, 10V

Reach Compliance Code :

not_compliant

Rise Time :

53.4ns

Vgs (Max) :

±25V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Channels :

1

Element Configuration :

Single

Power Dissipation :

190W

ECCN Code :

EAR99

Length :

10.4mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

Automotive, AEC-Q101, FDmesh™ II

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

650V

Width :

9.35mm

Drain to Source Voltage (Vdss) :

600V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Factory Lead Time :

26 Weeks

Fall Time (Typ) :

61.8 ns

Resistance :

110mOhm

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

5V @ 250μA

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Matte Tin (Sn) - annealed