STB36NM60N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

29A

Vgs (Max) :

±25V

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

245

Number of Pins :

3

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Base Part Number :

STB36N

Turn-Off Delay Time :

106 ns

Terminal Finish :

Matte Tin (Sn) - annealed

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

2722pF @ 100V

Number of Terminations :

2

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

25V

Lead Free :

Lead Free

Fall Time (Typ) :

67 ns

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

JESD-30 Code :

R-PSSO-G2

Operating Temperature :

150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Rise Time :

34ns

Factory Lead Time :

26 Weeks

Pin Count :

4

FET Type :

N-Channel

Power Dissipation :

210W

Mounting Type :

Surface Mount

Turn On Delay Time :

17 ns

Drain Current-Max (Abs) (ID) :

25A

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain to Source Breakdown Voltage :

600V

Gate Charge (Qg) (Max) @ Vgs :

83.6nC @ 10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Rds On (Max) @ Id, Vgs :

105m Ω @ 14.5A, 10V

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Resistance :

105mOhm

Current - Continuous Drain (Id) @ 25°C :

29A Tc

Series :

Automotive, AEC-Q101, MDmesh™ II

ECCN Code :

EAR99

Power Dissipation-Max :

210W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single