STB35NF10T4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

12 Weeks

Drain to Source Breakdown Voltage :

100V

Transistor Element Material :

SILICON

Height :

4.6mm

Number of Terminations :

2

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Termination :

SMD/SMT

Transistor Application :

SWITCHING

Base Part Number :

STB35N

Input Capacitance (Ciss) (Max) @ Vds :

1550pF @ 25V

Time@Peak Reflow Temperature-Max (s) :

30

ECCN Code :

EAR99

Turn On Delay Time :

17 ns

Continuous Drain Current (ID) :

40A

JESD-30 Code :

R-PSSO-G2

Number of Pins :

3

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Power Dissipation :

115W

Operating Temperature :

-55°C~175°C TJ

Length :

10.75mm

Terminal Form :

Gull wing

Threshold Voltage :

3V

Element Configuration :

Single

Power Dissipation-Max :

115W Tc

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V

Nominal Vgs :

3 V

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Peak Reflow Temperature (Cel) :

245

Lead Free :

Lead Free

Terminal Finish :

Matte Tin (Sn)

Radiation Hardening :

No

Fall Time (Typ) :

15 ns

Mounting Type :

Surface Mount

Number of Elements :

1

Width :

10.4mm

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

55nC @ 10V

Rise Time :

60ns

Turn-Off Delay Time :

60 ns

Rds On (Max) @ Id, Vgs :

35m Ω @ 17.5A, 10V

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 250µA

Voltage - Rated DC :

100V

Series :

STripFET™ II

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

40A Tc

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Dual Supply Voltage :

100V

Current Rating :

40A