STB34NM60ND

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Threshold Voltage :

4V

Factory Lead Time :

26 Weeks

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

29A Tc

Operating Temperature :

150°C TJ

Power Dissipation-Max :

190W Tc

Number of Pins :

3

REACH SVHC :

No SVHC

Transistor Element Material :

SILICON

Power Dissipation :

190W

Base Part Number :

STB34N

Width :

10.4mm

Number of Elements :

1

Height :

4.6mm

Case Connection :

DRAIN

Mounting Type :

Surface Mount

Terminal Finish :

Matte Tin (Sn) - annealed

Pin Count :

4

Additional Feature :

ULTRA-LOW RESISTANCE

Input Capacitance (Ciss) (Max) @ Vds :

2785pF @ 50V

Rise Time :

53.4ns

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

5V @ 250μA

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs (Max) :

±25V

Series :

FDmesh™ II

JESD-30 Code :

R-PSSO-G2

Turn On Delay Time :

30 ns

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

600V

Peak Reflow Temperature (Cel) :

245

Resistance :

110mOhm

Radiation Hardening :

No

Fall Time (Typ) :

61.8 ns

Gate Charge (Qg) (Max) @ Vgs :

80.4nC @ 10V

Rds On (Max) @ Id, Vgs :

110m Ω @ 14.5A, 10V

Element Configuration :

Single

Turn-Off Delay Time :

111 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Form :

Gull wing

Packaging :

Cut Tape (CT)

Continuous Drain Current (ID) :

29A

Number of Terminations :

2

ECCN Code :

EAR99

Length :

10.75mm

Gate to Source Voltage (Vgs) :

25V

Lead Free :

Lead Free

JESD-609 Code :

e3

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

Drain to Source Breakdown Voltage :

650V

Transistor Application :

SWITCHING