STB34NM60N
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- Mfr.Part #
- STB34NM60N
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 29A D2PAK
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Application :
- SWITCHING
- Length :
- 10.75mm
- Series :
- MDmesh™ II
- Drain-source On Resistance-Max :
- 0.105Ohm
- Current - Continuous Drain (Id) @ 25°C :
- 29A Tc
- Number of Terminations :
- 2
- Operating Temperature :
- 150°C TJ
- Vgs (Max) :
- ±25V
- Rds On (Max) @ Id, Vgs :
- 105m Ω @ 14.5A, 10V
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Turn On Delay Time :
- 17 ns
- Pulsed Drain Current-Max (IDM) :
- 126A
- Terminal Form :
- Gull wing
- Drain to Source Voltage (Vdss) :
- 600V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- FET Type :
- N-Channel
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 84nC @ 10V
- Height :
- 4.6mm
- Element Configuration :
- Single
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Case Connection :
- DRAIN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Threshold Voltage :
- 3V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2722pF @ 100V
- Packaging :
- Cut Tape (CT)
- Operating Mode :
- ENHANCEMENT MODE
- JESD-30 Code :
- R-PSSO-G2
- Fall Time (Typ) :
- 70 ns
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Nominal Vgs :
- 3 V
- Mount :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 25V
- Power Dissipation-Max :
- 250W Tc
- DS Breakdown Voltage-Min :
- 600V
- Lead Free :
- Lead Free
- Rise Time :
- 34ns
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Factory Lead Time :
- 26 Weeks
- Turn-Off Delay Time :
- 106 ns
- Number of Pins :
- 3
- Width :
- 10.4mm
- Base Part Number :
- STB34N
- Continuous Drain Current (ID) :
- 29A
- REACH SVHC :
- No SVHC
- Datasheets
- STB34NM60N
N-Channel Cut Tape (CT) 105m Ω @ 14.5A, 10V ±25V 2722pF @ 100V 84nC @ 10V 600V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB34NM60N Overview
A device's maximal input capacitance is 2722pF @ 100V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 29A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 106 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 126A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 17 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 25V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 3V threshold voltage.To maintain normal operation, it is recommended that the DS breakdown voltage be above 600V.This transistor requires a 600V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
STB34NM60N Features
a continuous drain current (ID) of 29A
the turn-off delay time is 106 ns
based on its rated peak drain current 126A.
a threshold voltage of 3V
a 600V drain to source voltage (Vdss)
STB34NM60N Applications
There are a lot of STMicroelectronics
STB34NM60N applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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