STB34N50DM2AG

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

Automotive, AEC-Q101, MDmesh™ DM2

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

26A Tc

Vgs(th) (Max) @ Id :

5V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

1850pF @ 100V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

44nC @ 10V

DS Breakdown Voltage-Min :

500V

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Factory Lead Time :

17 Weeks

FET Type :

N-Channel

Continuous Drain Current (ID) :

26A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

ECCN Code :

EAR99

Vgs (Max) :

±25V

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

500V

Number of Terminations :

2

JESD-30 Code :

R-PSSO-G2

Case Connection :

DRAIN

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Avalanche Energy Rating (Eas) :

700 mJ

Drain-source On Resistance-Max :

0.12Ohm

Power Dissipation-Max :

190W Tc

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Pulsed Drain Current-Max (IDM) :

104A

Transistor Element Material :

SILICON

Base Part Number :

STB34N

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

120m Ω @ 12.5A, 10V