STB33N60M2

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

26A Tc

Weight :

3.949996g

Gate to Source Voltage (Vgs) :

25V

Continuous Drain Current (ID) :

26A

Number of Channels :

1

Vgs (Max) :

±25V

Power Dissipation :

190W

Base Part Number :

STB33N

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

45.5nC @ 10V

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Packaging :

Cut Tape (CT)

Series :

MDmesh™ II Plus

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Turn On Delay Time :

16 ns

Factory Lead Time :

26 Weeks

Turn-Off Delay Time :

109 ns

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

125m Ω @ 13A, 10V

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

600V

Input Capacitance (Ciss) (Max) @ Vds :

1781pF @ 100V

Number of Pins :

3

Rise Time :

9.6ns

Fall Time (Typ) :

9 ns

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

4V @ 250µA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

190W Tc