STB32NM50N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

MDmesh™ II

Turn-Off Delay Time :

110 ns

JESD-30 Code :

R-PSSO-G2

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Power Dissipation :

190W

Case Connection :

DRAIN

Fall Time (Typ) :

23.6 ns

Rise Time :

9.5ns

Rds On (Max) @ Id, Vgs :

130m Ω @ 11A, 10V

Gate Charge (Qg) (Max) @ Vgs :

62.5nC @ 10V

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

21.5 ns

Power Dissipation-Max :

190W Tc

Drain to Source Breakdown Voltage :

500V

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

22A Tc

Continuous Drain Current (ID) :

22A

Vgs(th) (Max) @ Id :

4V @ 250µA

Radiation Hardening :

No

Element Configuration :

Single

Lead Free :

Lead Free

Number of Terminations :

2

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Form :

Gull wing

Base Part Number :

STB32N

Height :

4.6mm

Mounting Type :

Surface Mount

Factory Lead Time :

26 Weeks

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Pulsed Drain Current-Max (IDM) :

88A

Input Capacitance (Ciss) (Max) @ Vds :

1973pF @ 50V

Transistor Application :

SWITCHING

Operating Temperature :

150°C TJ

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

245

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

25V

Width :

9.35mm

Length :

10.4mm

JESD-609 Code :

e3

ECCN Code :

EAR99

Vgs (Max) :

±25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Matte Tin (Sn) - annealed