STB31N65M5
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- Mfr.Part #
- STB31N65M5
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 22A D2PAK
- Stock
- 82,688
- In Stock ：
- 82,688
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Breakdown Voltage :
- 650V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Height :
- 4.6mm
- Gate to Source Voltage (Vgs) :
- 25V
- Turn On Delay Time :
- 46 ns
- Base Part Number :
- STB31N
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±25V
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Series :
- MDmesh™ V
- Current - Continuous Drain (Id) @ 25°C :
- 22A Tc
- Factory Lead Time :
- 17 Weeks
- Number of Elements :
- 1
- Power Dissipation-Max :
- 150W Tc
- Turn-Off Delay Time :
- 46 ns
- Resistance :
- 148mOhm
- Continuous Drain Current (ID) :
- 22A
- FET Type :
- N-Channel
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Width :
- 9.35mm
- Mounting Type :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 148m Ω @ 11A, 10V
- Length :
- 10.4mm
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Gate Charge (Qg) (Max) @ Vgs :
- 45nC @ 10V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Lead Free :
- Lead Free
- Operating Temperature :
- 150°C TJ
- Mount :
- Surface Mount
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Power Dissipation :
- 150W
- Input Capacitance (Ciss) (Max) @ Vds :
- 1865pF @ 100V
- Datasheets
- STB31N65M5
N-Channel Tape & Reel (TR) 148m Ω @ 11A, 10V ±25V 1865pF @ 100V 45nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB31N65M5 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1865pF @ 100V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 22A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=650V. And this device has 650V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 46 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 46 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 25V.By using drive voltage (10V), this device helps reduce its overall power consumption.
STB31N65M5 Features
a continuous drain current (ID) of 22A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 46 ns
STB31N65M5 Applications
There are a lot of STMicroelectronics
STB31N65M5 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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