STB15NM65N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Terminal Finish :

Matte Tin (Sn)

Power Dissipation-Max :

150W Tc

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

3

Additional Feature :

AVALANCHE RATED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pin Count :

3

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

245

Rds On (Max) @ Id, Vgs :

270m Ω @ 7.75A, 10V

Drain to Source Breakdown Voltage :

650V

Transistor Application :

SWITCHING

Reach Compliance Code :

not_compliant

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.27Ohm

Continuous Drain Current (ID) :

15.5A

Fall Time (Typ) :

26 ns

Vgs (Max) :

±25V

Vgs(th) (Max) @ Id :

4V @ 250µA

Time@Peak Reflow Temperature-Max (s) :

40

Series :

MDmesh™ II

Rise Time :

8ns

Turn-Off Delay Time :

80 ns

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

150W

RoHS Status :

ROHS3 Compliant

Number of Terminations :

2

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

400 mJ

JESD-30 Code :

R-PSSO-G2

Mounting Type :

Surface Mount

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Qualification Status :

Not Qualified

Base Part Number :

STB15N

Gate to Source Voltage (Vgs) :

25V

Pulsed Drain Current-Max (IDM) :

62A

Input Capacitance (Ciss) (Max) @ Vds :

1900pF @ 50V

Gate Charge (Qg) (Max) @ Vgs :

55nC @ 10V

Lead Free :

Lead Free