STB12NM50ND

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Pins :

3

JESD-30 Code :

R-PSSO-G2

Terminal Finish :

Matte Tin (Sn) - annealed

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Turn-Off Delay Time :

40 ns

Fall Time (Typ) :

17 ns

Input Capacitance (Ciss) (Max) @ Vds :

850pF @ 50V

Terminal Form :

Gull wing

Power Dissipation :

100W

Pin Count :

4

Number of Terminations :

2

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Mount :

Surface Mount

Base Part Number :

STB12N

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

5V @ 250μA

Packaging :

Tape and Reel (TR)

Terminal Position :

Single

Turn On Delay Time :

12 ns

Lead Free :

Lead Free

Rise Time :

15ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

100W Tc

Peak Reflow Temperature (Cel) :

245

Operating Temperature :

150°C TJ

Resistance :

290mOhm

Vgs (Max) :

±25V

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

500V

Number of Elements :

1

Series :

FDmesh™ II

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

11A

Gate to Source Voltage (Vgs) :

25V

Rds On (Max) @ Id, Vgs :

380m Ω @ 5.5A, 10V

FET Type :

N-Channel

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

44A

Configuration :

Single