SSM6P35FE,LM

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Arrays

Continuous Drain Current (ID) :

100mA

RoHS Status :

RoHS Compliant

Package / Case :

SOT-563, SOT-666

Packaging :

Tape and Reel (TR)

FET Feature :

Standard

Operating Temperature :

150°C

Max Power Dissipation :

150mW

Supplier Device Package :

ES6

Drain to Source Voltage (Vdss) :

20V

Current - Continuous Drain (Id) @ 25°C :

100mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

12.2pF @ 3V

FET Type :

2 P-Channel (Dual)

Factory Lead Time :

12 Weeks

Rds On Max :

8 Ω

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

1V @ 1mA

Mounting Type :

Surface Mount

Power - Max :

150mW

Rds On (Max) @ Id, Vgs :

8Ohm @ 50mA, 4V

Input Capacitance :

12.2pF