SSM6N61NU,LF

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Terminations :

6

Input Capacitance (Ciss) (Max) @ Vds :

410pF @ 10V

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power - Max :

2W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Package / Case :

6-WDFN Exposed Pad

Drain Current-Max (Abs) (ID) :

4A

Continuous Drain Current (ID) :

4A

Max Power Dissipation :

2W

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

S-PDSO-N6

FET Type :

2 N-Channel (Dual)

RoHS Status :

RoHS Compliant

Terminal Form :

NO LEAD

Gate Charge (Qg) (Max) @ Vgs :

3.6nC @ 4.5V

Number of Elements :

2

Published :

2016

DS Breakdown Voltage-Min :

20V

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Mount :

Surface Mount

Drain-source On Resistance-Max :

0.033Ohm

Vgs(th) (Max) @ Id :

1V @ 1mA

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

20V

Rds On (Max) @ Id, Vgs :

33m Ω @ 4A, 4.5V

Factory Lead Time :

12 Weeks

FET Feature :

Logic Level Gate, 1.5V Drive

Mounting Type :

Surface Mount