SSM6N44FE,LM

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Arrays

Power Dissipation :

150mW

Packaging :

Tape and Reel (TR)

Terminal Form :

Flat

Vgs(th) (Max) @ Id :

1.5V @ 100μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

2

Rds On (Max) @ Id, Vgs :

4 Ω @ 10mA, 4V

Radiation Hardening :

No

Mounting Type :

Surface Mount

Turn On Delay Time :

50 ns

Input Capacitance (Ciss) (Max) @ Vds :

8.5pF @ 3V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain-source On Resistance-Max :

7Ohm

Drain to Source Voltage (Vdss) :

30V

Turn-Off Delay Time :

200 ns

Number of Channels :

2

Published :

2009

Max Junction Temperature (Tj) :

150°C

Drain to Source Breakdown Voltage :

30V

Mount :

Surface Mount

Number of Pins :

6

Gate to Source Voltage (Vgs) :

20V

Transistor Application :

SWITCHING

Base Part Number :

SSM6N44

Factory Lead Time :

16 Weeks

Number of Terminations :

6

Manufacturer Package Identifier :

SON6-P-0.50

Max Power Dissipation :

150mW

Transistor Element Material :

SILICON

Package / Case :

SOT-563, SOT-666

FET Type :

2 N-Channel (Dual)

Operating Temperature :

150°C TJ

FET Feature :

Logic Level Gate

Height :

600μm

Continuous Drain Current (ID) :

100mA

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

0.1A

RoHS Status :

RoHS Compliant

Element Configuration :

Dual