SSM6N35AFE,LF

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Arrays

Current - Continuous Drain (Id) @ 25°C :

250mA Ta

Vgs(th) (Max) @ Id :

1V @ 100µA

Number of Terminations :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

1.1 Ω @ 150mA, 4.5V

Package / Case :

SOT-563, SOT-666

Operating Temperature :

150°C

RoHS Status :

RoHS Compliant

FET Type :

2 N-Channel (Dual)

FET Feature :

Logic Level Gate, 1.2V Drive

DS Breakdown Voltage-Min :

20V

Surface Mount :

yes

Number of Elements :

2

Power - Max :

250mW

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

0.34nC @ 4.5V

Feedback Cap-Max (Crss) :

10 pF

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code :

R-PDSO-F6

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Flat

Packaging :

Tape and Reel (TR)

Factory Lead Time :

12 Weeks

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

2.4Ohm

Drain Current-Max (Abs) (ID) :

0.25A

Drain to Source Voltage (Vdss) :

20V

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

36pF @ 10V