SSM6L36FE,LM

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Arrays

Current - Continuous Drain (Id) @ 25°C :

500mA 330mA

Vgs(th) (Max) @ Id :

1V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds :

46pF @ 10V

Packaging :

Tape and Reel (TR)

Package / Case :

SOT-563, SOT-666

Operating Temperature :

150°C TJ

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.85Ohm

Base Part Number :

SSM6L36

Factory Lead Time :

16 Weeks

Gate Charge (Qg) (Max) @ Vgs :

1.23nC @ 4V

Mounting Type :

Surface Mount

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

630m Ω @ 200mA, 5V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain Current-Max (Abs) (ID) :

0.5A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

JESD-30 Code :

R-PDSO-F6

FET Feature :

Logic Level Gate

Reach Compliance Code :

Unknown

Transistor Application :

SWITCHING

Max Power Dissipation :

150mW

Terminal Position :

Dual

Published :

2009

Continuous Drain Current (ID) :

330mA

Number of Elements :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N and P-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

6

RoHS Status :

RoHS Compliant

DS Breakdown Voltage-Min :

20V

Terminal Form :

Flat

Drain to Source Voltage (Vdss) :

20V

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR