SQJQ906E-T1_GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain to Source Resistance :

2.7MOhm

Continuous Drain Current (ID) :

95A

Mounting Type :

Surface Mount

Power - Max :

50W

FET Feature :

Standard

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

40V

Factory Lead Time :

14 Weeks

FET Type :

2 N-Channel (Dual)

Supplier Device Package :

PowerPAK® 8 x 8 Dual

Current - Continuous Drain (Id) @ 25°C :

95A Tc

Min Operating Temperature :

-55°C

Series :

Automotive, AEC-Q101, TrenchFET®

Package / Case :

PowerPAK® 8 x 8 Dual

Number of Channels :

2

Turn On Delay Time :

14 ns

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

3.5V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

3600pF @ 20V

Turn-Off Delay Time :

26 ns

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

42nC @ 10V

Drain to Source Voltage (Vdss) :

40V

Rds On (Max) @ Id, Vgs :

3.3mOhm @ 5A, 10V

Operating Temperature :

-55°C~175°C TJ

Height :

2.03mm

Max Junction Temperature (Tj) :

175°C

Max Operating Temperature :

175°C

Power Dissipation :

50W