SQJQ112E-T1_GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

21 ns

Product Status :

Active

Qualification :

AEC-Q101

Drain to Source Voltage (Vdss) :

100 V

Channel Type :

N

Vgs(th) (Max) @ Id :

3.5V @ 250µA

Power Dissipation :

600W

Mounting Style :

SMD/SMT

Series :

Automotive, AEC-Q101, TrenchFET? Gen IV

Supplier Device Package :

PowerPAK? 8 x 8

Manufacturer :

Vishay

Channel Mode :

Enhancement

Package / Case :

PowerPAK? 8 x 8

Power Dissipation (Max) :

600W (Tc)

Current - Continuous Drain (Id) @ 25°C :

296A (Tc)

Input Capacitance (Ciss) (Max) @ Vds :

15945 pF @ 25 V

RoHS :

Details

Packaging :

MouseReel

Minimum Operating Temperature :

- 55 C

Package :

Digi-Reel?

Configuration :

Single

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

Drive Voltage (Max Rds On, Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

2.53mOhm @ 20A, 10V

Package Type :

PowerPAK 8 x 8L

FET Type :

N-Channel

Product Type :

MOSFET

Pin Count :

4

Number of Elements per Chip :

1

Product :

MOSFET

Subcategory :

MOSFETs

Maximum Operating Temperature :

+ 175 C

Brand :

Vishay Semiconductors

Product Category :

MOSFET

Gate Charge (Qg) (Max) @ Vgs :

272 nC @ 10 V

Operating Temperature :

-55°C ~ 175°C (TJ)

Transistor Polarity :

N-Channel

Continuous Drain Current Id :

296A

FET Feature :

-

MSL :

MSL 1 - Unlimited

Number of Channels :

1 Channel