SQ3427EV-T1_GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

60V

Drain-source On Resistance-Max :

0.095Ohm

Drain to Source Voltage (Vdss) :

60V

Operating Temperature :

-55°C~175°C TJ

Drain Current-Max (Abs) (ID) :

5.3A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Dual

Reach Compliance Code :

Unknown

Vgs (Max) :

±20V

Feedback Cap-Max (Crss) :

80 pF

JEDEC-95 Code :

MO-193AA

Power Dissipation-Max :

5W Tc

Number of Elements :

1

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

1000pF @ 30V

Rds On (Max) @ Id, Vgs :

95m Ω @ 4.5A, 10V

Packaging :

Tape and Reel (TR)

Surface Mount :

yes

FET Type :

P-Channel

Published :

2017

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Factory Lead Time :

12 Weeks

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

5.3A Tc

Series :

Automotive, AEC-Q101, TrenchFET®

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Terminal Form :

Gull wing

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

2.5V @ 250μA

JESD-30 Code :

R-PDSO-G6

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Number of Terminations :

6