SQ3419EV-T1_GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

6

Feedback Cap-Max (Crss) :

100 pF

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

ECCN Code :

EAR99

Power Dissipation-Max :

5W Tc

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

6.9A Tc

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

MO-193AA

FET Type :

P-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Dual

Drain-source On Resistance-Max :

0.058Ohm

Series :

Automotive, AEC-Q101, TrenchFET®

Gate Charge (Qg) (Max) @ Vgs :

11.3nC @ 4.5V

Reach Compliance Code :

Unknown

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Input Capacitance (Ciss) (Max) @ Vds :

990pF @ 20V

Drain to Source Voltage (Vdss) :

40V

JESD-30 Code :

R-PDSO-G6

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

DS Breakdown Voltage-Min :

40V

Drain Current-Max (Abs) (ID) :

6.9A

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

58m Ω @ 2.5A, 10V

RoHS Status :

ROHS3 Compliant

Surface Mount :

yes

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Factory Lead Time :

12 Weeks

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Configuration :

SINGLE WITH BUILT-IN DIODE