SQ3419EEV-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

6

Turn-Off Delay Time :

26 ns

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

40

Rise Time :

8ns

Terminal Position :

Dual

Element Configuration :

Single

Number of Pins :

6

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation-Max :

5W Tc

Pin Count :

6

Packaging :

Digi-Reel®

Radiation Hardening :

No

REACH SVHC :

Unknown

Power Dissipation :

5W

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

7.4A Tc

Weight :

19.986414mg

Continuous Drain Current (ID) :

7.4A

Gate to Source Voltage (Vgs) :

12V

Series :

TrenchFET®

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 4.5V

Lead Free :

Lead Free

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Turn On Delay Time :

9 ns

Resistance :

78mOhm

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Terminal Form :

Gull wing

FET Type :

P-Channel

Threshold Voltage :

-1.5V

Number of Channels :

1

Drain to Source Breakdown Voltage :

-40V

Drain to Source Voltage (Vdss) :

40V

Fall Time (Typ) :

10 ns

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

1065pF @ 20V

Published :

2013

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

50m Ω @ 2.5A, 10V

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±12V

Mounting Type :

Surface Mount