SQ3410EV-T1_GE3
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- Mfr.Part #
- SQ3410EV-T1_GE3
- Manufacturer
- Vishay
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 8A 6TSOP
- Stock
- 19,347
- In Stock ：
- 19,347
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Weight :
- 19.986414mg
- Factory Lead Time :
- 12 Weeks
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Rise Time :
- 12ns
- REACH SVHC :
- Unknown
- Drain to Source Voltage (Vdss) :
- 30V
- Power Dissipation :
- 5W
- RoHS Status :
- ROHS3 Compliant
- Gate to Source Voltage (Vgs) :
- 20V
- Rds On Max :
- 17.5 mΩ
- Drain to Source Resistance :
- 17.5mOhm
- Turn-Off Delay Time :
- 20 ns
- Continuous Drain Current (ID) :
- 8A
- Number of Pins :
- 6
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Gate Charge (Qg) (Max) @ Vgs :
- 21nC @ 10V
- Mount :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Input Capacitance :
- 1.005nF
- Input Capacitance (Ciss) (Max) @ Vds :
- 1005pF @ 15V
- Fall Time (Typ) :
- 7 ns
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Min Operating Temperature :
- -55°C
- Packaging :
- Tape and Reel (TR)
- Rds On (Max) @ Id, Vgs :
- 17.5mOhm @ 5A, 10V
- Published :
- 2015
- Series :
- TrenchFET®
- Max Operating Temperature :
- 175°C
- Turn On Delay Time :
- 9 ns
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Operating Temperature :
- -55°C~175°C TJ
- Number of Channels :
- 1
- Power Dissipation-Max :
- 5W Tc
- Radiation Hardening :
- No
- Vgs (Max) :
- ±20V
- Supplier Device Package :
- 6-TSOP
- Drain to Source Breakdown Voltage :
- 30V
- Current - Continuous Drain (Id) @ 25°C :
- 8A Tc
- Number of Elements :
- 1
- Threshold Voltage :
- 2V
- FET Type :
- N-Channel
- Datasheets
- SQ3410EV-T1_GE3
N-Channel Tape & Reel (TR) 17.5mOhm @ 5A, 10V ±20V 1005pF @ 15V 21nC @ 10V 30V SOT-23-6 Thin, TSOT-23-6
SQ3410EV-T1_GE3 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1005pF @ 15V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 8A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 30V, and this device has a drainage-to-source breakdown voltage of 30VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 20 ns.This device has a drain-to-source resistance of 17.5mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 9 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 2V, which means that it will not activate any of its functions when its threshold voltage reaches 2V.For this transistor to work, a voltage 30V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
SQ3410EV-T1_GE3 Features
a continuous drain current (ID) of 8A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 20 ns
single MOSFETs transistor is 17.5mOhm
a threshold voltage of 2V
a 30V drain to source voltage (Vdss)
SQ3410EV-T1_GE3 Applications
There are a lot of Vishay Siliconix
SQ3410EV-T1_GE3 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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