SQ3418AEEV-T1_GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

6

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

JESD-30 Code :

R-PDSO-G6

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 10V

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Rds On (Max) @ Id, Vgs :

35m Ω @ 6A, 10V

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Drain to Source Voltage (Vdss) :

30V

Feedback Cap-Max (Crss) :

62 pF

DS Breakdown Voltage-Min :

40V

Surface Mount :

yes

Reach Compliance Code :

Unknown

Power Dissipation-Max :

4W Tc

Transistor Element Material :

SILICON

Series :

TrenchFET®

RoHS Status :

ROHS3 Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

370pF @ 15V

Current - Continuous Drain (Id) @ 25°C :

7.8A Tc

Drain-source On Resistance-Max :

0.032Ohm

Factory Lead Time :

12 Weeks

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tape and Reel (TR)

Drain Current-Max (Abs) (ID) :

8A