SQ3427EEV-T1-GE3

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Mfr.Part #
SQ3427EEV-T1-GE3
Manufacturer
Vishay
Package / Case
SOT-23-6 Thin, TSOT-23-6
Datasheet
Download
Description
MOSFET P-CH 60V 5.5A 6TSOP
Stock
393
In Stock :
393

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Element Configuration :
Single
Drain-source On Resistance-Max :
0.082Ohm
Mounting Type :
Surface Mount
Turn-Off Delay Time :
26 ns
Feedback Cap-Max (Crss) :
85 pF
Number of Pins :
6
Number of Elements :
1
Package / Case :
SOT-23-6 Thin, TSOT-23-6
Packaging :
Digi-Reel®
Threshold Voltage :
-1.5V
Gate Charge (Qg) (Max) @ Vgs :
32nC @ 10V
ECCN Code :
EAR99
Continuous Drain Current (ID) :
5.5A
Input Capacitance (Ciss) (Max) @ Vds :
1125pF @ 30V
REACH SVHC :
Unknown
Weight :
19.986414mg
Lead Free :
Lead Free
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Turn On Delay Time :
10 ns
Radiation Hardening :
No
Terminal Form :
Gull wing
Pin Count :
6
Mount :
Surface Mount
Rds On (Max) @ Id, Vgs :
82m Ω @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C :
5.5A Tc
Number of Channels :
1
Peak Reflow Temperature (Cel) :
260
Operating Temperature :
-55°C~175°C TJ
Number of Terminations :
6
FET Type :
P-Channel
Rise Time :
7ns
Gate to Source Voltage (Vgs) :
20V
Published :
2013
Power Dissipation :
5W
Drain to Source Voltage (Vdss) :
60V
Operating Mode :
ENHANCEMENT MODE
Fall Time (Typ) :
12 ns
RoHS Status :
ROHS3 Compliant
Vgs (Max) :
±20V
Transistor Element Material :
SILICON
Power Dissipation-Max :
5W Tc
Vgs(th) (Max) @ Id :
2.5V @ 250μA
Series :
TrenchFET®
Time@Peak Reflow Temperature-Max (s) :
40
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Terminal Position :
Dual
Datasheets
SQ3427EEV-T1-GE3
Introducing Transistors - FETs, MOSFETs - Single Vishay SQ3427EEV-T1-GE3 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Pins:6, Package / Case:SOT-23-6 Thin, TSOT-23-6, Number of Channels:1, Operating Temperature:-55°C~175°C TJ, Number of Terminations:6, SQ3427EEV-T1-GE3 pinout, SQ3427EEV-T1-GE3 datasheet PDF, SQ3427EEV-T1-GE3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SQ3427EEV-T1-GE3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SQ3427EEV-T1-GE3


P-Channel Digi-Reel® 82m Ω @ 4.5A, 10V ±20V 1125pF @ 30V 32nC @ 10V 60V SOT-23-6 Thin, TSOT-23-6

SQ3427EEV-T1-GE3 Description


The SQ3427EEV-T1-GE3 is an Automotive P-Channel 60 V (D-S) 175 °C MOSFET. A form of field-effect transistor (FET) called a metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is most frequently made by carefully controlling the oxidation of silicon. It has an isolated gate, whose voltage controls the device's conductivity. Electronic signals can be switched or amplified using this material's capacity to change conductivity in response to the amount of applied voltage. Nearly the same thing as a MOSFET is a metal-insulator-semiconductor field-effect transistor (MISFET). IGFET, or insulated-gate field-effect transistor, is another equivalent term.



SQ3427EEV-T1-GE3 Features


  • 100 % Rg and UIS Tested

  • Typical ESD Protection 800 V

  • Compliant to RoHS Directive 2002/95/EC

  • Halogen-free According to IEC 61249-2-21 Definition

  • TrenchFET® Power MOSFET

  • AEC-Q101 Qualified



SQ3427EEV-T1-GE3 Applications


  • Switch mode power supplies

  • Variable-frequency drives

  • Power electronics applications

  • Modern electric vehicles

  • As switching devices


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