SQ3426EV-T1_GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PDSO-G6

Number of Elements :

1

Transistor Element Material :

SILICON

Package / Case :

SOT-23-6 Thin, TSOT-23-6

DS Breakdown Voltage-Min :

60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

12 Weeks

Number of Terminations :

6

Current - Continuous Drain (Id) @ 25°C :

7A Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

60V

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 4.5V

Terminal Position :

Dual

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Configuration :

SINGLE WITH BUILT-IN DIODE

Surface Mount :

yes

Drain-source On Resistance-Max :

0.042Ohm

Operating Temperature :

-55°C~175°C TJ

Mounting Type :

Surface Mount

FET Type :

N-Channel

Reach Compliance Code :

Unknown

Feedback Cap-Max (Crss) :

70 pF

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

720pF @ 30V

Series :

Automotive, AEC-Q101, TrenchFET®

Power Dissipation-Max :

5W Tc

Drain Current-Max (Abs) (ID) :

7A

Rds On (Max) @ Id, Vgs :

42m Ω @ 5A, 10V